PART |
Description |
Maker |
D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
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MJF6668 ON2050 MJF6388 MJF6688 |
Complementary power darlington From old datasheet system COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS
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ONSEMI[ON Semiconductor] Motorola, Inc MOTOROLA INC
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2N3055MJ2955 MJ2955 2N3055 ON0038 2N3055_MJ2955 |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 120 VOLTS 115/ 180 WATTS 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS 15安培功率晶体管互补性的芯片6015 Complementary SlllconPower Translstors From old datasheet system
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ON Semiconductor Motorola Inc MOTOROLA[Motorola, Inc]
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D45VH D44VH |
Complementary Silicon Power Transistors 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS
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ONSEMI[ON Semiconductor]
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MJ2500 MJ3000 MJ1250 MJ3001 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS
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MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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NTE262 NTE261 |
Silicon complementary PNP transistor. Darlington power amplifier. Silicon Complementary Transistors Darlington Power Amplifier
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NTE[NTE Electronics]
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BD242A |
COMPLEMENTARY SILICON PLASTIC COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS
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New Jersey Semi-Conductor P...
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MJ403203 MJ80203 MJ4035 MJ4032 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SILICON NPN POWER TRANSISTOR
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STMICROELECTRONICS[STMicroelectronics]
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™ Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET) Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
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ON Semiconductor
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MJ21195G MJ21195G-13 |
Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON
|
ON Semiconductor
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